HITK0203MP(2011) データシートの表示（PDF） - Renesas Electronics

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HITK0203MP
(Rev.:2011)

Silicon N Channel MOS FET Power Switching

Renesas Electronics 

HITK0203MP

Silicon N Channel MOS FET

Power Switching

Features

 Low on-resistance

RDS(on) = 68 m typ (VGS = 4.5 V, ID = 1.5 A)

 Low drive current

 High speed switching

 2.5 V gate drive

Outline

RENESAS Package code: PLSP0003ZB-A

(Package name: MPAK)

3

Note: Marking is “SG”.

1

2

Preliminary Datasheet

R07DS0481EJ0100

Rev.1.00

Jun 22, 2011

3

D

G

1. Source

2

2. Gate

3. Drain

S

1

Absolute Maximum Ratings

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body - drain diode reverse drain current

Channel dissipation

VDSS

VGSS

ID

ID(pulse) Note1

IDR

Pch Note2

Channel temperature

Tch

Storage temperature

Tstg

Notes: 1. PW  10 s, duty cycle  1%

2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)

Ratings

20

12

2.9

10

2.9

0.8

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

W

C

C

R07DS0481EJ0100 Rev.1.00

Jun 22, 2011

Page 1 of 6

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