OMD100 データシートの表示（PDF） - Omnirel Corp => IRF

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OMD100

FOUR N-CHANNEL MOSFETS IN HERMETIC POWER PACKAGE

Omnirel Corp => IRF 

ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)

STATIC P/N OMD100 (100V)

Parameter

Min. Typ. Max. Units Test Conditions

BVDSS

VGS(th)

IGSSF

IGSSR

IDSS

Drain-Source Breakdown

Voltage

Gate-Threshold Voltage

Gate-Body Leakage Forward

Gate-Body Leakage Reverse

Zero Gate Voltage Drain

Current

ID(on)

VDS(on)

On-State Drain Current1

Static Drain-Source On-State

Voltage1

100

V VGS = 0,

ID = 250 mA

2.0

4.0 V VDS = VGS, ID = 250 mA

100 nA VGS = +20 V

- 100 nA VGS = -20 V

0.1 0.25 mA VDS = Max. Rat., VGS = 0

0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0,

TC = 125° C

35

A VDS 2 VDS(on), VGS = 10 V

1.1 1.60 V VGS = 10 V, ID = 20 A

RDS(on) Static Drain-Source On-State

Resistance1

.065 .080

VGS = 10 V, ID = 20 A

RDS(on) Static Drain-Source On-State

Resistance1

.10 .160

VGS = 10 V, ID = 20 A,

TC = 125 C

DYNAMIC

gfs

Forward Transductance1

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

td(on) Turn-On Delay Time

tr

Rise Time

td(off) Turn-Off Delay Time

tf

Fall Time

9.0 10

2700

1300

470

28

45

100

50

S(W )

pF

pF

pF

VDS 2 VDS(on), ID = 20 A

VGS = 0

VDS = 25 V

f = 1 MHz

ns VDD = 30 V, ID @ 20 A

ns Rg = 5.0 W , VG = 10V

ns (MOSFET switching times are

essentially independent of

ns operating temperature.)

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS

Continuous Source Current

(Body Diode)

ISM

Source Current1

(Body Diode)

VSD Diode Forward Voltage1

trr

Reverse Recovery Time

- 40 A

- 160 A

- 2.5 V

400

ns

Modified MOSPOWER

D

symbol showing

the integral P-N G

Junction rectifier.

S

TC = 25 C, IS = -40 A, VGS = 0

TJ = 150 C, IF = IS,

dlF/ds = 100 A/ms

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)

STATIC P/N OMD200 (200V)

Parameter

Min. Typ. Max. Units Test Conditions

BVDSS

VGS(th)

IGSSF

IGSSR

IDSS

Drain-Source Breakdown

Voltage

Gate-Threshold Voltage

Gate-Body Leakage Forward

Gate-Body Leakage Reverse

Zero Gate Voltage Drain

Current

ID(on)

VDS(on)

On-State Drain Current1

Static Drain-Source On-State

Voltage1

200

V VGS = 0,

ID = 250 mA

2.0

4.0 V VDS = VGS, ID = 250 mA

100 nA VGS = + 20 V

-100 nA VGS = - 20 V

0.1 0.25 mA VDS = Max. Rat., VGS = 0

0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0,

TC = 125° C

30

A VDS 2 VDS(on), VGS = 10 V

1.36 1.76 V VGS = 10 V, ID = 16 A

RDS(on) Static Drain-Source On-State

Resistance1

.085 .110

VGS = 10 V, ID = 16 A

RDS(on) Static Drain-Source On-State

Resistance1

0.14 .200

VGS = 10 V, ID = 16 A,

TC = 125 C

DYNAMIC

gfs

Forward Transductance1

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

td(on) Turn-On Delay Time

tr

Rise Time

td(off) Turn-Off Delay Time

tf

Fall Time

10.0 12.5

2400

600

250

25

60

85

38

S(W )

pF

pF

pF

VDS 2 VDS(on), ID = 16 A

VGS = 0

VDS = 25 V

f = 1 MHz

ns VDD = 75 V, ID @ 16 A

ns Rg = 5.0 W ,VGS = 10V

ns (MOSFET switching times are

essentially independent of

ns operating temperature.)

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS

Continuous Source Current

(Body Diode)

ISM

Source Current1

(Body Diode)

VSD Diode Forward Voltage1

trr

Reverse Recovery Time

- 30 A

- 120 A

-2 V

350

ns

Modified MOSPOWER

D

symbol showing

the integral P-N G

Junction rectifier.

S

TC = 25 C, IS = -30 A, VGS = 0

TJ = 150 C, IF = IS,

dlF/ds = 100 A/ms

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

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