HMC-ALH382(V01) データシートの表示（PDF） - Hittite Microwave

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HMC-ALH382
(Rev.:V01)

GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz

Hittite Microwave 

v01.0108

Absolute Maximum Ratings

Drain Bias Voltage

Gate Bias Voltage

RF Input Power

Storage Temperature

Operating Temperature

+5.5 Vdc

-1 to +0.3 Vdc

-5 dBm

-65 to +150 °C

-55 to +85 °C

HMC-ALH382

GaAs HEMT LOW NOISE

AMPLIFIER, 57 - 65 GHz

1

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Outline Drawing

Die Packaging Information [1]

Standard

Alternate

WP - 8

[2]

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM].

2. TYPICAL BOND PAD IS .004” SQUARE.

3. BACKSIDE METALLIZATION: GOLD.

4. BACKSIDE METAL IS GROUND.

5. BOND PAD METALLIZATION: GOLD.

6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.

7. OVERALL DIE SIZE ±.002”

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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