HMC-ALH445(V03) データシートの表示（PDF） - Hittite Microwave
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HMC-ALH445 Datasheet PDF : 6 Pages
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v03.0410
HMC-ALH445
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 18 - 40 GHz
Pad Descriptions
Pad Number
Function
1
RFIN
Description
This pad is AC coupled
and matched to 50 Ohms.
1
Interface Schematic
2, 4
Vdd
Power Supply Voltage for the amplifier. See
assembly for required external components.
3
RFOUT
This pad is AC coupled
and matched to 50 Ohms.
Die bottom
GND
Die bottom must be connected to RF/DC ground.
Assembly Diagram
Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier.
Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output.
Note 3: Biasable from either side.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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