HMC-ALH216 データシートの表示（PDF） - Hittite Microwave

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HMC-ALH216

GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz

Hittite Microwave 

v03.0209

1

Absolute Maximum Ratings

Drain Bias Voltage

Gate Bias Voltage

RF Input Power

Channel Temperature

Continuous Pdiss (T=85°C)

(derate 14.9 mW/C above 85°C)

Thermal Resistance

(Channel to die bottom)

Storage Temperature

Operating Temperature

+5.5 Vdc

-1 to +0.3 Vdc

6 dBm

180 °C

1.4 W

67 °C/W

-65 to +150 °C

-55 to +85 °C

Outline Drawing

HMC-ALH216

GaAs HEMT MMIC LOW NOISE

AMPLIFIER, 14 - 27 GHz

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

1 - 128

Die Packaging Information [1]

Standard

Alternate

GP-1 (Gel Pack)

[2]

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM].

2. TYPICAL BOND PAD IS .004” SQUARE.

3. BACKSIDE METALLIZATION: GOLD.

4. BACKSIDE METAL IS GROUND.

5. BOND PAD METALLIZATION: GOLD.

6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.

7. OVERALL DIE SIZE ±.002”

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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