HMC308E データシートの表示（PDF） - Hittite Microwave
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HMC308E Datasheet PDF : 6 Pages
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v05.1107
HMC308 / 308E
GENERAL PURPOSE 100 mW GaAs
MMIC AMPLIFIER, 0.8 - 3.8 GHz
Power Compression
@ 2.0 GHz, Vdd = +3V
30
28
26
Pout
24
Gain
22
PAE
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6
INPUT POWER (dBm)
Psat vs. Temperature @ Vdd = +3V
24
20
16
12
+25 C
+85 C
-40 C
8
4
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
Power Compression
@ 2.5 GHz, Vdd = +3V
28
24
Pout
Gain
20
PAE
16
12
8
4
0
-4
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6
INPUT POWER (dBm)
Output P1dB vs.
Temperature @ Vdd = +3V
24
20
16
12
8
+25 C
+85 C
-40 C
4
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
Output IP3
vs. Temperature @ Vdd = +3V
38
34
30
26
22
18
+25 C
+85 C
14
-40 C
10
6
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)(Vdd = +5Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 6.25 mW/°C above 85 °C)
Thermal Resistance
(channel to lead)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+7.0 Vdc
+10 dBm
150 °C
0.406 W
160 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9
9-5
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