HMC326MS8 データシートの表示（PDF） - Hittite Microwave

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HMC326MS8

GaAs InGaP HBT MMIC DRIVERAMPLIFIER, 3.0 - 4.5 GHz

Hittite Microwave 

v08.0808

HMC326MS8G / 326MS8GE

GaAs InGaP HBT MMIC DRIVER

AMPLIFIER, 3.0 - 4.5 GHz

Absolute Maximum Ratings

Collector Bias Voltage (Vcc)

Control Voltage Range (Vpd)

RF Input Power (RFIN)(Vs = Vpd = +5Vdc)

Junction Temperature

Continuous Pdiss (T = 85 °C)

(derate 14 mW/°C above 85 °C)

Thermal Resistance

(junction to ground paddle)

Storage Temperature

Operating Temperature

ESD Sensitivity (HBM)

+5.5 Vdc

+5.5 Vdc

+15 dBm

150 °C

0.916 W

71 °C/W

-65 to +150 °C

-40 to +85 °C

Class 1A

Outline Drawing

ELECTROSTATIC SENSITIVE DEVICE

9

OBSERVE HANDLING PRECAUTIONS

NOTES:

1. LEADFRAME MATERIAL: COPPER ALLOY

2. DIMENSIONS ARE IN INCHES [MILLIMETERS]

3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO

PCB RF GROUND.

Package Information

Part Number

Package Body Material

HMC326MS8G

Low Stress Injection Molded Plastic

Lead Finish

Sn/Pb Solder

HMC326MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn

[1] Max peak reflow temperature of 235 °C

[2] Max peak reflow temperature of 260 °C

[3] 4-Digit lot number XXXX

MSL Rating

MSL1 [1]

MSL1 [2]

Package Marking [3]

H326

XXXX

H326

XXXX

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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