HMC342LC4(V03) データシートの表示（PDF） - Hittite Microwave

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HMC342LC4
(Rev.:V03)

GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz

Hittite Microwave 

v03.0409

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

RF Input Power (RFIN)(Vdd = +3.0 Vdc)

Channel Temperature

Continuous Pdiss (T= 85 °C)

(derate 3.62 mW/°C above 85 °C)

Thermal Resistance

(channel to ground paddle)

Storage Temperature

Operating Temperature

+5.5 Vdc

0 dBm

175 °C

0.326 W

276 °C/W

-65 to +150 °C

-40 to +85 °C

HMC342LC4

GaAs PHEMT MMIC LOW NOISE

AMPLIFIER, 13 - 25 GHz

8

Typical Supply Current vs. Vdd

Vdd (Vdc)

+2.7

+3.0

+3.3

Idd (mA)

42

43

44

Note: Amplifier will operate over full voltage ranges shown above.

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Outline Drawing

NOTES:

1. PACKAGE BODY MATERIAL: ALUMINA.

2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL.

3. DIMENSIONS ARE IN INCHES (MILLIMETERS).

4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.

5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –

6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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