HMC756 データシートの表示（PDF） - Hittite Microwave
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HMC756 Datasheet PDF : 8 Pages
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v01.0709
Typical Applications
The HMC756 is ideal for:
• Point-to-Point Radios
3
• Point-to-Multi-Point Radios
• VSAT
• Military & Space
Functional Diagram
HMC756
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 16 - 24 GHz
Features
Saturated Output Power: +33 dBm @ 28% PAE
High Output IP3: +41 dBm
High Gain: 23 dB
DC Supply: +7V @ 790 mA
DC Blocked RF I/Os
No External Matching Required
Die Size: 2.4 x 1.6 x 0.1 mm
General Description
The HMC756 is a three stage GaAs PHEMT MMIC
1 Watt Power Amplifier which operates between 16
and 24 GHz. The HMC756 provides 23 dB of gain,
and +33 dBm of saturated output power at 28% PAE
from a +7V supply. The RF I/Os are DC blocked and
matched to 50 Ohms for ease of integration into
Multi-Chip-Modules (MCMs). All data is taken with
the chip in a 50 Ohm test fixture connected via 0.025
mm (1 mil) diameter wire bonds of length 0.31 mm
(12 mils).
Electrical Specifications, TA = +25° C, Vdd = Vdd1, = Vdd2 = +7V, Idd = 790 mA [1]
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Frequency Range
16 - 20
20 - 24
Gain
19
22
20
23
Gain Variation Over Temperature
0.026
0.03
Input Return Loss
16
15
Output Return Loss
18
16
Output Power for 1 dB Compression (P1dB)
29
31
30
32
Saturated Output Power (Psat)
33
33
Output Third Order Intercept (IP3)[2]
41
40
Total Supply Current (Idd)
790
790
[1] Adjust Vgg between -2 to 0V to achieve Idd= 790 mA typical.
[2] Measurement taken at +7V @ 790 mA, Pin / Tone = +17 dBm
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
3 - 126
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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