HN1B04F データシートの表示（PDF） - Toshiba
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HN1B04F Datasheet PDF : 6 Pages
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HN1B04F
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
HN1B04F
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
Switching application
Q1:
z Excellent hFE linearity
: hFE(2) = 25 (min) at VCE = −6V, IC = −400mA
Q2:
z Excellent hFE linearity
: hFE(2) = 25 (min) at VCE = 6V, IC = 400mA
Unit: mm
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
VCBO
VCEO
VEBO
IC
−35
−30
−5
−500
Q2 Absolute Maximum Ratings (Ta = 25°C)
1.EMITTER1 (E1)
2.BASE1
(B1)
3.COLLECTOR2 (C2)
Unit
4.EMITTER2 (E2)
5.BASE2
(B2)
V
6.COLLECTOR1 (C1)
V
JEDEC
―
V
JEITA
―
mA
TOSHIBA
2-3N1A
Weight: 0.015g (typ.)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
VCBO
VCEO
VEBO
IC
35
V
30
V
5
V
500
mA
Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector power dissipation
Junction temperature
Storage temperature range
PC*
300
mW
Tj
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating. 200mW per element must be exceeded.
Start of commercial production
2002-02
1
2014-03-01
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