HN58V256A データシートの表示（PDF） - Renesas Electronics

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HN58V256A

256k EEPROM (32-kword × 8-bit) Ready/Busy and RES function (HN58V257A)

Renesas Electronics 

HN58V256A Series, HN58V257A Series

Operation Table

Operation

CE

OE

WE

RES*3

Read

Standby

VIL

VIL

VIH

VH*1

VIH

×*2

×

×

Write

VIL

VIH

VIL

VH

Deselect

VIL

VIH

VIH

VH

Write inhibit

×

×

VIH

×

×

VIL

×

×

Data polling

VIL

VIL

VIH

VH

Program reset

×

×

×

VIL

Notes: 1. Refer to the recommended DC operating condition.

2. ×: Don’t care

3. This function is supported by only the HN58V267A series.

RDY/Busy*3

High-Z

High-Z

High-Z to VOL

High-Z





VOL

High-Z

I/O

Dout

High-Z

Din

High-Z





Data out (I/O7)

High-Z

Absolute Maximum Ratings

Parameter

Symbol

Value

Supply voltage relative to VSS

Input voltage relative to VSS

Operating temperature range*2

VCC

Vin

Topr

−0.6 to +7.0

−0.5*1 to +7.0*3

0 to +70

Storage temperature range

Tstg

−55 to +125

Notes: 1. Vin min = −3.0 V for pulse width ≤ 50 ns

2. Including electrical characteristics and data retention

3. Should not exceed VCC + 1.0 V.

Unit

V

V

°C

°C

Recommended DC Operating Conditions

Parameter

Symbol

Min

Typ

Supply voltage

Input voltage

Operating temperature

VCC

VSS

VIL

VIH

VH*4

Topr

2.7

3.0

0

0

−0.3*1



1.9*2



VCC −0.5 

0



Notes: 1. VIL min: −1.0 V for pulse width ≤ 50 ns.

2. VIH min for VCC = 3.6 to 5.5 V is 2.4 V.

3. VIH max: VCC + 1.0 V for pulse width ≤ 50 ns.

4. This function is supported by only the HN58V257A series.

Max

Unit

5.5

V

0

V

0.6

V

VCC + 0.3*3 V

VCC + 1.0 V

+70

°C

Rev.5.00, Nov. 17.2003, page 4 of 22

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