HS-117 データシートの表示（PDF） - Intersil
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HS-117 Datasheet PDF : 2 Pages
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Die Characteristics
DIE DIMENSIONS
2616µm x 2794µm (103 mils x 110 mils)
483µm ±25.4µm (19 mils ±1 mil)
INTERFACE MATERIALS
Glassivation:
Type: Silox (SiO2)
Thickness: 8.0kÅ ±1.0kÅ
Top Metallization:
Type: AlSiCu
Thickness: 16.0kÅ ±2kÅ
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Metallization Mask Layout
VIN
HS-117RH
Backside Finish:
Gold
ASSEMBLY RELATED INFORMATION
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION
Worst Case Current Density:
<2.0 x 105 A/cm2
Transistor Count:
95
HS-117RH
VIN
VOUT
VOUT
ADJ
VOUTK
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