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HS-303RH-T データシートの表示(PDF) - Intersil

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HS-303RH-T Datasheet PDF : 2 Pages
1 2
Functional Diagram
IN
N
P
D
Die Characteristics
DIE DIMENSIONS:
(2130µm x 1930µm x 279µm ±25.4µm)
84 x 76 x 11mils ±1mil
METALLIZATION:
Type: Al
Thickness: 12.5kÅ ±2kÅ
SUBSTRATE POTENTIAL:
Unbiased (DI)
BACKSIDE FINISH:
Gold
Metallization Mask Layout
LOGIC
0
1
SBDIP TRUTH TABLE
SW1AND SW2 SW3 AND SW4
OFF
ON
ON
OFF
PASSIVATION:
Type: Silox (SiO2)
Thickness: 8kÅ ±1kÅ
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm2
TRANSISTOR COUNT:
76
PROCESS:
Metal Gate CMOS, Dielectric Isolation
HS-303RH-T
D3
D4
D1
D2
S1
S2
IN1
IN2
All Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
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