5962F9581304QCC データシートの表示（PDF） - Intersil
部品番号
コンポーネント説明
メーカー
5962F9581304QCC Datasheet PDF : 5 Pages
| |||
HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH
Die Characteristics
DIE DIMENSIONS:
2690µm x 5200µm (106mils x 205mils)
Thickness: 483µm ± 25.4µm (19mils ± 1mil)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0kÅ ± 1.0kÅ
Top Metallization:
Type: AlSiCu
Thickness: 16.0kÅ ± 2kÅ
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 105 A/cm2
Transistor Count:
196
Metallization Mask Layout
HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH
V-
V+
GND
For additional products, see www.intersil.com/product_tree
Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted
in the quality certifications found at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
3
FN6411.2
December 12, 2012
Share Link: 