HSD4M64B4W データシートの表示（PDF） - Hanbit Electronics Co.,Ltd
部品番号
コンポーネント説明
メーカー
HSD4M64B4W
Hanbit Electronics Co.,Ltd
HSD4M64B4W Datasheet PDF : 10 Pages
| |||
HANBit
HSD4M64B4W
DC OPERATING CONDITIONS
(Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C) )
PARAMETER
SYMBOL
MIN
TYP.
MAX
UNIT
Supply Voltage
Vcc
3.0
3.3
3.6
V
Input High Voltage
VIH
2.0
3.0
Vcc+0.3
V
Input Low Voltage
VIL
-0.3
0
0.8
V
Output High Voltage
VOH
2.4
-
-
V
Output Low Voltage
VOL
-
-
0.4
V
Input leakage current
I LI
-12
-
12
uA
Notes :
1. VIH (max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
NOTE
1
2
IOH = -2mA
IOL = 2mA
3
CAPACITANCE
(VCC = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)
DESCRIPTION
SYMBOL
MIN
Clock
/RAS, /CAS,/WE,/CS, CKE, DQM
Address
DQ (DQ0 ~ DQ63)
CCLK
10
CIN
10
CADD
10
COUT
16
MAX
16
20
20
26
UNITS
pF
pF
pF
pF
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
TEST
PARAMETER
SYMBOL
CONDITION
-13
Operating current
ICC1
(One bank active)
Precharge standby current in
power-down mode
ICC2P
ICC2PS
Precharge standby current in
non power-down mode
ICC2N
Burst length = 1
tRC ≥ tRC(min)
440
IO = 0mA
CKE ≤ VIL(max)
tCC=10ns
CKE & CLK ≤ VIL(max)
tCC=∞
CKE ≥ VIH(min)
CS* ≥ VIH(min), tCC=10ns
Input signals are changed
one time during 20ns
VERSION
-12 -10
440 400
4
4
60
UNIT NOTE
-10L
400 mA
1
mA
mA
mA
URLwww.hbe.co.kr
Rev.0.0 (March / 2002)
5
HANBit Electronics Co.,Ltd.
Share Link: