HSM276SR データシートの表示（PDF） - Renesas Electronics

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HSM276SR

Silicon Schottky Barrier Diode for Detector and Mixer

Renesas Electronics 

HSM276SR

Absolute Maximum Ratings

(Ta = 25°C)

Item

Reverse voltage

Average rectified current

Junction temperature

Storage temperature

Note: 1. Per one device

Symbol

VR

IO *1

Tj

Tstg

Value

Unit

3

V

30

mA

125

°C

–55 to +125

°C

Electrical Characteristics *1

(Ta = 25°C)

Item

Symbol Min Typ Max Unit Test Condition

Reverse voltage

VR

Reverse current

IR

Forward current

IF

Capacitance

C

Capacitance deviation ∆C

ESD-Capability *2

—

3

——V

IR = 1 mA

—

—

50

µA VR = 0.5 V

35 — — mA VF = 0.5 V

— — 0.9 pF VR = 0.5 V, f = 1 MHz

— — 0.1 pF VR = 0.5 V, f = 1 MHz

30 — — V

C = 200 pF, R = 0 Ω , Both forward and

reverse direction 1 pulse.

Notes: 1. Per one device

2. Failure Criterion; IR ≥ 100 µA at VR = 0.5 V

Rev.5.00, Nov.10.2003, page 2 of 4

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