HT82V735-8 データシートの表示（PDF） - Holtek Semiconductor
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HT82V735-8 Datasheet PDF : 9 Pages
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HT82V735
Absolute Maximum Ratings
Supply Voltage .............................VSS-0.3V to VSS+6V
Input Voltage .............................VSS-0.3V to VDD+0.3V
Storage Temperature ...........................-50°C to 125°C
Operating Temperature ..........................-20°C to 70°C
Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may
cause substantial damage to the device. Functional operation of this device at other conditions beyond those
listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliabil-
ity.
Electrical Characteristics
VSS=0V; fi=1kHz; RL=32W; Ta=25°C
Symbol
Supplies
Parameter
Test Conditions
VDD
Conditions
Min. Typ. Max. Unit
VDD
Supply Voltage
IDD
Supply Current
IPD
Power-down Current
D.C. Characteristics
¾
¾
5V No load
5V
¾
2.4
¾
6
V
¾
10
¾
mA
¾
1
¾
mA
VI(OS)
IO
RO
Input Offset Voltage
Maximum Output Current
Output Resistance
5V
¾
5V (THD+N)/S<0.1%
5V
¾
¾
10
¾
mV
¾
62
¾
mA
¾
230
¾
mW
VO
PSRR
Output Voltage Swing
Power Supply Rejection Ratio
RL=8W
5V RL=16W
RL=32W
CS=2.2mF,
5V VRIPPLE=200VRMS,
f=120Hz
0.66
¾
3
V
0.38
¾
3.15
V
0.18
¾
3.29
V
¾
66
¾
dB
XTALK
Channel Separation
A.C. Characteristics
5V PO=200mW, RL=8W,
CB=2.2mF
¾
85
¾
dB
PO=200mW, RL=8W,
f=1kHz
¾
0.03
¾
PO=120mW, RL=16W,
Total Harmonic Distortion Plus 5V f=1kHz
¾
0.01
¾
(THD+N)/S Noise to Signal Ratio
PO=75mW, RL=32W,
f=1kHz
¾
0.01
¾
%
3.3V PO=30mW, RL=32W,
f=1kHz
¾
0.01
¾
(THD+N)/S=0.1%,
f=1kHz
¾
¾
¾
PO
Output Power
RL=8W
RL=16W
5V RL=32W
(THD+N)/S=10%,
f=1kHz
¾
240
¾
¾
160
¾
¾
90
¾
mW
¾
¾
¾
RL=8W
RL=16W
RL=32W
¾
330
¾
¾
200
¾
¾
110
¾
Rev. 1.10
2
February 18, 2004
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