HY27SA081G1M-VEP データシートの表示（PDF） - Hynix Semiconductor

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HY27SA081G1M-VEP

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory

Hynix Semiconductor 

HY27UA(08/16)1G1M Series

HY27SA(08/16)1G1M Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Document Title

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory

Revision History

No.

History

0.0 1) Initial Draft

0.1 1) Add 1.8V Operation Product to Data sheet

1) Change AC Characteristics

0.2 - tWP(25ns->40ns), tWC(50ns->60ns),

- tRP(30ns->40ns), tRC(50ns->60ns),

- tREADID(35ns->45ns)

1) Add Errata (3V Product)

Draft Date Remark

Nov. 28. 2003 Preliminary

Mar. 11. 2004 Preliminary

Apr. 29. 2004 Preliminary

tWH tREH

Specification 15 15

Relaxed value 20 20

0.3

May. 14. 2004 Preliminary

2) Add Applicaiton Note

Reset command must be issued when the controller writes data to

another 512Mb.(i.e. When A26 is changed during program.)

3) Modify the description of Device Operations

- /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled

(Enabled) (Page22)

4) Add the description of System Interface Using /CE don’t care (Page37)

1) Delete Errata

2) Change Characteristics

tCRY

0.4

Before

60 + tr

After

70 + tr

tREA@ID Read

35

45

Jun. 01. 2004 Preliminary

3) Delete Cache Program

1) Change TSOP1, WSOP1, FBGA package dimension

0.5 2) Edit TSOP1, WSOP1 package figures

3) Change FBGA package figure

Oct. 20. 2004

This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

use of circuits described. No patent licenses are implied.

Rev 0.5 / Oct. 2004

1

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