HY27UF081G2M-F データシートの表示（PDF） - Hynix Semiconductor
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HY27UF081G2M-F Datasheet PDF : 48 Pages
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Preliminary
HY27UF(08/16)1G2M Series
HY27SF(08/16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Document Title
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
Revision History
Revision
No.
History
0.0
1) Initial Draft.
1) Correct Fig.10 Sequential out cycle after read
2) Add the text to Fig.1, Table.1, Table.2
- text : IO15 - IO8 (x16 only)
3) Delete ‘3.2 Page program NOTE 1.
0.1
- Note : if possible it is better to remove this constrain
4) Change the text ( page 10,13, 45)
- 2.2 Address Input : 28 Addresses -> 27 Addresses
- 3.7 Reset : Fig.29 -> Fig.30
- 5.1 Automatic page read after power up : Fig.30 -> Fig.29
5) Add 5.3 Addressing for program operation & Fig.34
1) Change TSOP, WSOP, FBGA package dimension & figures.
- Change TSOP, WSOP, FBGA package mechanical data
- Change FBGA thickness (1.2 -> 1.0 mm)
2) Correct TSOP, WSOP Pin configurations.
0.2
- 38th NC pin has been changed Lockpre(figure 3,4)
3) Edit figure 15,19 & table 4
4) Add Bad Block Management
5) Change Device Identifier 3rd Byte
- 3rd Byte ID is changed. (reserved -> don't care)
- 3rd Byte ID table is deleted.
1) Add Errata
tCLS tCLH tWP tALS tALH tDS tWC tR
Specification 0
10 25
0
10 20
50
25
Relaxed value 5
15 40
5
15 25
60
27
Draft Date Remark
Aug. 2004 Preliminary
Sep. 2004 Preliminary
Oct. 2004 Preliminary
0.3
2) LOCKPRE is changed to PRE.
- Texts, Table, Figures are changed.
Nov.29 2004 Preliminary
3) Add Note.4 (table.14)
4) Block Lock Mechanism is deleted.
- Texts, Table, figures are deleted.
5) Add Application Note(Power-On/Off Sequence & Auto Sleep mode.)
- Texts & Figures are added.
6) Edit the figures. (#10~25)
1) Change AC characteristics(tREH)
before: 20ns -> after: 30ns
0.4
2) Edit Note.1 (page. 21)
Jan.19 2005 Preliminary
3) Edit the Application note 1,2
4) Edit The Address cycle map (x8, x16)
Rev 0.7 / Apr. 2005
1
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