HY27UF081G2M-T データシートの表示（PDF） - Hynix Semiconductor

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HY27UF081G2M-T

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory

Hynix Semiconductor 

Preliminary

HY27UF(08/16)1G2M Series

HY27SF(08/16)1G2M Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Item

Symbol

Test Condition

Min

Max

Unit

Input / Output Capacitance (1)

CI/O

VIL=0V

-

10

pF

Input Capacitance(1)

CIN

VIN=0V

-

10

pF

Table 11: Pin Capacitance (TA=25C, F=1.0MHz)

Note: 1. For the stacked devices version the Input Capacitance is <TBD> and the I/O capacitance is <TBD>

Parameter

Symbol

Program Time

tPROG

Dummy Busy Time for Cache Program

tCBSY

Main Array

NOP

Number of partial Program Cycles in the same page

Spare Array

NOP

Block Erase Time

tBERS

Table 12: Program / Erase Characteristics

Min Typ Max Unit

- 300 700 us

-

3 700 us

-

-

4 Cycles

-

-

4 Cycles

-

2

3

ms

Rev 0.7 / Apr. 2005

20

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