HY27UF081G2M-F データシートの表示（PDF） - Hynix Semiconductor

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HY27UF081G2M-F

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory

Hynix Semiconductor 

Preliminary

HY27UF(08/16)1G2M Series

HY27SF(08/16)1G2M Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Revision History

- Continued -

Revision

No.

History

1) Correct AC characteristics(tREH)

before: 30ns-> after: 20ns

2) Add Errata

Case

tRC

tRP

0.5

Specification Read(all) 50

20

Relaxed Except for

value

ID Read

50

20

ID Read

60

25

1) Change AC characteristics

tDH

Before

10

0.6

After

15

Draft Date Remark

tREH

20

20

30

tREA

30

Jan. 25. 2005 Preliminary

30

30

Mar. 09. 2005 Preliminary

2) Add tADL parameter

- tADL=100ns

3) Correct table.9

1) Correct AC Timing Characteristics Table

- Errata value is eddited.

- tADL(max) is changed to tADL(min).

2) Change Errata

- tREA is deleted from the errata

Case

tRC

tRP

tREH

Before

Except for

ID Read

50

20

20

ID Read

60

25

30

0.7

After

Read (all) 60

25

30

3) Edit pin Description table

4) Delete Multiple Die & Stacked Devices Access

- Texts & tables are deleted.

5) Edit Data Protection texts

6) Add Read ID table

7) Add tOH parameter

- tOH=15ns(min.)

8) Add Marking Information

9) Correct application note.2

- tCS(2us) is changed to 100ns.

Apr. 06. 2005 Preliminary

Rev 0.7 / Apr. 2005

2

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