Q67100-Q2116 データシートの表示（PDF） - Siemens AG

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Q67100-Q2116

1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version)

Siemens AG 

1M x 4-Bit Dynamic RAM

(Hyper Page Mode (EDO) version)

HYB 514405BJ/BJL-50/-60/-70

Preliminary Information

• 1 048 576 words by 4-bit organization

• 0 to 70 ˚C operating temperature

• Hyper Page Mode - EDO

• Performance:

tRAC RAS access time

tCAC CAS access time

tAA

Access time from address

tRC

Read/Write cycle time

tHPC Hyper page mode (EDO)

cycle time

-50 -60 -70

50 60 70 ns

13 15 20 ns

25 30 35 ns

89 104 124 ns

20 25 30 ns

• Single + 5 V (± 10 %) supply

• Low power dissipation

max. 660 mW active (-50 version)

max. 605 mW active (-60 version)

max. 550 mW active (-70 version)

• Standby power dissipation:

11 mW max.standby (TTL)

5.5 mW max.standby (CMOS)

1.1 mW max.standby (CMOS) for Low Power Version

• Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,

hidden refresh and test mode capability

• All inputs and outputs TTL-compatible

• 1024 refresh cycles / 16 ms

• 1024 refresh cycles / 128 ms for Low Power Version

• Plastic Packages: P-SOJ-26/20-5 with 300 mil width

Semiconductor Group

1

5.96

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