HYB514405BJ データシートの表示（PDF） - Siemens AG

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HYB514405BJ

1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version)

Siemens AG 

HYB 514405BJ/BJL-50/-60/-70

1M x 4 EDO - DRAM

Absolute Maximum Ratings

Operating temperature range ............................................................................................0 to 70 ˚C

Storage temperature range......................................................................................– 55 to + 150 ˚C

Input/output voltage ........................................................................................................ – 1 to + 7 V

Power Supply voltage ..................................................................................................... – 1 to + 7 V

Data out current (short circuit) ................................................................................................ 50 mA

Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent

damage of the device. Exposure to absolute maximum rating conditions for extended periods

may affect device reliability.

DC Characteristics

TA = 0 to 70 ˚C, VSS = 0 V, VCC = 5 V ± 10 %, tT = 2 ns

Parameter

Input high voltage

Input low voltage

Output high voltage (IOUT = – 5 mA)

Output low voltage (IOUT = 4.2 mA)

Input leakage current, any input

(0 V < Vin < 7, all other input = 0 V)

Output leakage current

(DO is disabled, 0 < VOUT < VCC)

Average VCC supply current

-50 version

-60 version

-70 version

Symbol

Vih

Vil

Voh

Vol

II(L)

Limit Values

min.

max.

2.4

– 1.0

VCC + 0.5

0.8

2.4

–

–

0.4

– 10

10

Unit

V

V

V

V

µA

Test

Condition

1)

1)

1)

1)

1)

Io(L)

– 10

10

µA 1)

ICC1

–

–

–

mA 2) 3)4)

120

110

100

Standby VCC supply current

(RAS = CAS = WE = Vih)

ICC2

–

Average VCC supply current during RAS-only ICC3

refresh cycles

-50 version

–

-60 version

–

-70 version

–

Average VCC supply current during hyper page ICC4

mode(EDO) operation

-50 version

–

-60 version

–

-70 version

–

Standby VCC supply current

(RAS = CAS = WE = VCC – 0.2 V)

ICC5

–

2

mA –

mA 2)4)

120

110

100

mA 2) 3)4)

100

90

80

1

mA 1)

200

µA L-version

Semiconductor Group

5

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