HYS64V64220GBDL データシートの表示（PDF） - Infineon Technologies
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HYS64V64220GBDL Datasheet PDF : 13 Pages
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144 pin SO-DIMM SDRAM Modules
HYS64V64220GBDL-7/7.5/8-D
512 MB PC100 / PC133
• u144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules
for notebook applications
• Two bank 64M x 64 non-parity module organisation
• suitable for use in PC100 and PC133 applications
• Performance:
fCK Clock frequency (max.)
tAC Clock access time
CAS latency = 2 & 3
-7
PC133
2-2-2
133
5.4
-7.5
PC133
3-3-3
133
5.4
-8
PC100
2-2-2
100
6
Units
MHz
ns
• Single +3.3V(± 0.3V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence
(Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E2PROM
• Uses sixteen 256Mbit SDRAM (32Mb x8 ) components in P-TFBGA packages
• 8196 refresh cycles every 64 ms
• Gold contact pad, JEDEC MO-190 outline dimensions
• This module family is fully pin and functional compatible
with the latest INTEL SO-DIMM specification
• Importante Notice:
This SO-DIMM module is based on 256Mbit SDRAM technology and can be
used in applications only, where 256Mbit addressing is supported.
INFINEON Technologies
1
2002-08-06
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