HYS64V64220GBDL データシートの表示（PDF） - Infineon Technologies
部品番号
コンポーネント説明
メーカー
HYS64V64220GBDL Datasheet PDF : 13 Pages
| |||
HYS64V64220GBDL-7/7.5/8-D
144 pin SO-DIMM SDRAM Modules
AC Characteristics 9)10)
TA = 0 to 70 oC; VSS = 0 V; VDD, VDDQ = 3.3 V ± 0.3 V, tT = 1 ns
TA = 0 to 70 °C; VSS = 0 V; VDD = 3.3 V ± 0.3 V, tT = 1 ns
Parameter
Symbol
Limit Values
Unit
Row Active Time
Row Cycle Time
Row Cycle Time during Auto
Refresh
Activate(a) to Activate(b)
Command period
CAS(a) to CAS(b) Command
period
-7
PC133-
222
-7.5
PC133-
333
-8
PC100-
222
min. max. min. max. min. max.
tRAS 37 100k 45 100k 48 100k ns 5
tRC 60 – 67 – 70 – ns 5
tRFC 63
67
70
ns
tRRD 14 – 15 – 16 – ns 5
tCCD
1
–
1
–
1
– CLK
Refresh Cycle
Refresh Period (8192 cycles) tREF – 64 – 64 – 64 ms
Self Refresh Exit Time
tSREX
1
–
1
–
1
CLK
Read Cycle
Data Out Hold Time
tOH
3
–
3
–
3
– ns 2,
6
Data Out to Low Impedance Time
tLZ
0
–
0
–
0
– ns
Data Out to High Impedance Time
tHZ
3
7
3
7
3
8 ns
DQM Data Out Disable Latency
tDQZ
–
2
–
2
–
2 CLK
Write Cycle
Last Data Input to Precharge
(Write without AutoPrecharge)
tWR 14 – 15 – 15 – ns 7
Last Data Input to Activate
(Write with AutoPrecharge)
tDAL,min
CLK 8
DQM Write Mask Latency
tDQW
0
–
0
–
0
– CLK
Infineon Technologies
8
2002-08-06
Share Link: 