IDT7140SA100JB データシートの表示（PDF） - Integrated Device Technology

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IDT7140SA100JB

HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM

Integrated Device Technology 

IDT7130SA/LA and IDT7140SA/LA

High-Speed 1K x 8 Dual-Port Static SRAM

Military, Industrial and Commercial Temperature Ranges

Timing Waveform of Write Cycle No. 1, (R/W Controlled Timing)(1,5,8)

ADDRESS

OE

CE

R/W

DATA OUT

DATA IN

tWC

tAS(6)

(4)

tAW

tWP(2)

tWZ(7)

tDW

tHZ(7)

tWR(3)

tOW

tDH

tHZ(7)

(4)

2689 drw 10

Timing Waveform of Write Cycle No. 2, (CE Controlled Timing)(1,5)

tWC

ADDRESS

CE

R/W

tAS(6)

tAW

tEW(2)

tDW

tWR(3)

tDH

DATA IN

2689 drw 11

NOTES:

1. R/W or CE must be HIGH during all address transitions.

2. A write occurs during the overlap (tEW or tWP) of CE = VIL and R/W = VIL.

3. tWR is measured from the earlier of CE or R/W going HIGH to the end of the write cycle.

4. During this period, the l/O pins are in the output state and input signals must not be applied.

5. If the CE LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the HIGH impedance state.

6. Timing depends on which enable signal (CE or R/W) is asserted last.

7. This parameter is determined be device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test Load

(Figure 2).

8. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off data to be placed on the

bus for the required tDW. If OE is HIGH during a R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP.

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