IDT7140SA100F データシートの表示（PDF） - Integrated Device Technology

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IDT7140SA100F

HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM

Integrated Device Technology 

IDT7130SA/LA and IDT7140SA/LA

High-Speed 1K x 8 Dual-Port Static SRAM

Military, Industrial and Commercial Temperature Ranges

Data Retention Characteristics (LA Version Only)

7130LA/7140LA

Symbol

Parameter

Test Condition

Min.

Typ.(1)

Max. Unit

VDR

VCC for Data Retention

2.0

___

___

V

ICCDR

Data Retention Current

MIL. & IND.

___

VCC = 2.0V, CE > VCC -0.2V

COM'L.

___

100

4000 µ A

100

1500

tCDR(3)

tR(3)

Chip Deselect to Data Retention Time

Operation Recovery Time

VIN > VCC -0.2V or VIN < 0.2V

0

___

tRC(2)

___

___

ns

___

ns

NOTES:

1. VCC = 2V, TA = +25°C, and is not production tested.

2. tRC = Read Cycle Time

3. This parameter is guaranteed but not production tested.

2689 tbl 07

Data Retention Waveform

DATA RETENTION MODE

VCC

CE

4.5V

tCDR

VIH

VDR ≥ 2.0V

VDR

4.5V

tR

VIH

2692 drw 06 ,

6

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