IDT71V256SA10YGI8 データシートの表示（PDF） - Integrated Device Technology

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IDT71V256SA10YGI8

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Integrated Device Technology 

IDT71V256SA

3.3V CMOS Static RAM 256K (32K x 8-Bit)

Recommended DC Operating

Conditions

Symbol

Parameter

Min. Typ. Max. Unit

VCC Supply Voltage

3.0 3.3 3.6 V

GND Ground

00

0

V

VIH Input High Voltage - Inputs 2.0 ____

5.0

V

VIH Input High Voltage - I/O

2.0 ____ VCC +0.3 V

VIL Input Low Voltage

-0.3(1) ____

0.8

V

NOTE:

3101 tbl 06

1. VIL (min.) = –2.0V for pulse width less than 5ns, once per cycle.

Commercial and Industrial Temperature Ranges

DC Electrical Characteristics(1)

(VCC = 3.3V ± 0.3V, VLC = 0.2V, VHC = VCC - 0.2V, Commercial and Industrial Temperture Ranges)

Symbol

ICC

Parameter

Dynamic Operating Current CS < VIL, Outputs

Open, VCC = Max ., f = fMAX(2)

71V256SA10

100

71V256SA12

90

71V256SA15

85

71V256SA20 Unit

85

mA

ISB Standby Power Supply Current (TTL Level)

20

20

20

20

mA

CS = VIH, VCC = Max., Outputs Open, f = fMAX(2)

ISB1 Full Standby Power Supply Current (CMOS Level)

2

2

2

2

mA

CS > VHC, VCC = Max., Outputs Open, f = 0(2),

VIN < VLC or VIN > VHC

NOTES:

1. All values are maximum guaranteed values.

2. fMAX = 1/tRC, only address inputs cycling at fMAX; f = 0 means that no inputs are cycling.

3101 tbl 07

DC Electrical Characteristics

(VCC = 3.3V± 0.3V)

Symbol

Parameter

|ILI| Input Leakage Current

|ILO| Output Leakage Current

VOL Output Low Voltage

VOH Output High Voltage

Test Conditions

VCC = Max., VIN = GND to VCC

VCC = Max., CS = VIH, VOUT = GND to VCC

IOL = 8mA, VCC = Min.

IOH = -4mA, VCC = Min.

Min.

___

___

___

2.4

IDT71V256SA

Typ.

___

___

___

___

Max.

2

2

0.4

___

Unit

µA

µA

V

V

3101 tbl 08

6.432

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