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TCM680 データシートの表示(PDF) - TelCom Semiconductor Inc => Microchip

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TCM680
TelCom-Semiconductor
TelCom Semiconductor Inc => Microchip TelCom-Semiconductor
TCM680 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
+5V TO ±10V VOLTAGE CONVERTER
TCM680
ABSOLUTE MAXIMUM RATINGS*
VIN ..................................................................................................... +6.0V
V+OUT .............................................................................................. +12.0V
V
OUT
.............................................................................................
12.0V
V
OUT
Short-Circuit
Duration
............................
Continuous
V+OUT Current ............................................................ 75mA
VIN dV/dT .............................................................. 1V/µsec
Power Dissipation (TA 70°C)
Plastic DIP ...................................................... 730mW
Small Outline .................................................. 470mW
Storage Temperature ............................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
*Stresses above those listed in "Absolute Maximum Ratings" may cause
permanent damage to the device. These are stress ratings only and
functional operation of the device at these or other conditions above those
indicated in the operation section of the specification is not implied.
Exposure to the Absolute Maximum Ratings conditions for extended
periods of time may affect device reliability.
ELECTRICAL CHARACTERISTICS: VIN = +5V, TA = +25°C, test circuit Figure 1, unless otherwise indicated.
Symbol Parameter
Test Conditions
Min Typ Max Unit
Supply Voltage Range
Supply Current
Negative Charge Pump Output
Source Resistance
Positive Charge Pump Output
Source Resistance
FOSC
PEFF
VOUT EFF
Oscillator Frequency
Power Efficiency
Voltage Conversion Efficiency
MIN. TA MAX., RL = 2k
VIN = 3V, RL =
VIN = 5V, RL =
VIN = 5V, 0°C TA +70°C, RL =
VIN = 5V, – 40°C TA +85°C, RL =
IL– = 10mA, IL+ = 0mA, VIN = 5V
IL–= 5mA, IL+ = 0mA, VIN = 2.8V
IL–= 10mA, IL+ = 0mA, VIN = 5V:
0°C TA +70°C
– 40°C TA +85°C
IL+ = 10mA, IL– = 0mA, VIN = 5V
IL+ = 5mA, IL– = 0mA, VIN = 2.8V
IL+ = 10mA, IL– = 0mA, VIN = 5V:
0°C TA +70°C
– 40°C TA +85°C
RL = 2k
V+OUT, RL =
V O–UT, RL =
2.0 1.5 to 5.5 5.5 V
0.5
1
mA
1
2
2.5
3
140 180
180 250
220
250
140 180
180 250
220
250
21
— kHz
85
—%
97
99
—%
97
99
TelCom Semiconductor reserves the right to make changes in the circuitry or specifications detailed in this manual at any time without notice. Minimums
and maximums are guaranteed. All other specifications are intended as guidelines only. TelCom Semiconductor assumes no responsibility for the use of
any circuits described herein and makes no representations that they are free from patent infringement.
PIN DESCRIPTION
8-Pin
DIP/SOIC
1
2
3
4
5
6
7
8
Symbol
C1–
C2+
C2–
V
OUT
GND
VIN
C1+
V+OUT
Description
Input. Capacitor C1 negative terminal.
Input. Capacitor C2 positive terminal.
Input. Capacitor C2 negative terminal.
Output. Negative output voltage (–2VIN).
Input. Device ground.
Input. Power supply voltage.
Input. Capacitor C1 positive terminal.
Output. Positive output voltage (+2VIN)
4-14
VIN
C1
4.7µF
1 C1
+
VOUT
8
2 C+2
C+1 7
C2
4.7µF
3 C2TCM680 VIN 6
4
V
O
U
T
5
GND
C4
10µF
+
VOUT
RL+
GND
C3
10µF
RL
Figure 1. Test Circuit
VO–UT
TELCOM SEMICONDUCTOR, INC.

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