G08T120 データシートの表示（PDF） - Infineon Technologies

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G08T120

Low Loss IGBT in TrenchStop® and Fieldstop technology

Infineon Technologies 

TrenchStop® Series

IGW08T120

q

*) Eon and Etsinclude losses

due to diode recovery

Ets*

6,0mJ

4,0mJ

2,0mJ

Eoonff*

EEono*ff

0,0mJ

5A

10A

15A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, TJ=150°C,

VCE=600V, VGE=0/15V, RG=81Ω,

Dynamic test circuit in Figure E)

*) Eon and Ets include losses

3,2 mJ

due to diode recovery

Ets*

2,8 mJ

2,4 mJ

2,0 mJ

1,6 mJ

1,2 mJ

EoEno*ff

EEoonff*

0,8 mJ

0,4 mJ

0,0 mJ

5Ω

50Ω

100Ω 150Ω 200Ω

RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, TJ=150°C,

VCE=600V, VGE=0/15V, IC=8A,

Dynamic test circuit in Figure E)

2.0mJ

*) Eon and Ets include losses

due to diode recovery

*) Eon and Ets include losses

Ets*

due to diode recovery

3mJ

1.5mJ

1.0mJ

Eoff

Eon*

0.5mJ

0.0mJ

25°C

50°C

75°C 100°C 125°C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, VCE=600V,

VGE=0/15V, IC=8A, RG=81Ω,

Dynamic test circuit in Figure E)

2mJ

Ets*

1mJ EEoffon*

EEono*ff

0mJ

400V

500V

600V

700V

800V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

(inductive load, TJ=150°C,

VGE=0/15V, IC=8A, RG=81Ω,

Dynamic test circuit in Figure E)

Power Semiconductors

7

Rev. 2.6 Nov. 09

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