DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

IL5851 データシートの表示(PDF) - Integral Corp.

部品番号
コンポーネント説明
メーカー
IL5851
INTE-ElectronicGRAL
Integral Corp. INTE-ElectronicGRAL
IL5851 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
IL5851
______
PULSE
number sequence stored on-chip will be outpulsed. Any other valid key entries
will clear the memory and outpulse the new number sequence.
18 Pulse Output
The Pulse output is an open drain N-channel transistor designed to drive external
bipolar transistor. These transistor would normally be used to pulse the telephone
line by disconnecting and connecting the network. The IL5851N pulse output is
an open circuit during make and pulls to the GND supply during break.
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
VCC DC Supply Voltage (Referenced to GND)
VIN DC Input Voltage (Referenced to GND)
PD
Power Dissipation in Still Air **
Tstg Storage Temperature
-0.3 to +6.2
V
-0.3 to VCC +0.3
V
500
mW
-40 to +125
°C
* Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
** Derating: -10 mW/°C from 65°C to 70°C.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
VCC
DC Supply Voltage (Referenced to GND)
VIN
DC Input Voltage (Referenced to GND)
TA
Operating Temperature
Min
Max
Unit
2.0
6.0
V
0
VCC
V
-20
+70
°C
This device contains protection circuitry to guard against damage due to high static voltages or electric fields.
However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this
high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND(VIN or
VOUT)VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused
outputs must be left open.
4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]