ILX533KB データシートの表示（PDF） - Sony Semiconductor

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ILX533KB

2700 pixel × 3 line CCD Linear Sensor (Color)

Sony Semiconductor 

ILX533KB

Electrooptical Characteristics (Note 1)

Ta = 25°C, VDD = 12V, fφRS = 1MHz, Input clock = 5Vp-p,

Light source = 3200K, IR cut filter CM-500S (t = 1.0mm)

Item

Symbol Min.

Typ. Max.

Unit Remarks

Red RR

6.2

9.5

12.8

Sensitivity

Green RG

12.3

19

25.6 V/(lx · s) Note 2

Blue RB

7.5

11.5 15.5

Sensitivity nonuniformity PRNU

—

4

20

%

Note 3

Saturation output voltage VSAT

2.0

2.5

—

V

Note 4

Saturation

exposure

Red SER

Green SEG

Blue SEB

0.15

0.26

—

0.10

0.13

—

lx · s Note 5

0.12

0.21

—

Dark voltage average

VDRK

—

2

5

mV Note 6

Dark signal nonuniformity DSNU

—

4

12

mV Note 6

Image lag

IL

—

0.02

—

%

Note 7

Supply current

IVDD

—

30

50

mA

—

Total transfer efficiency TTE

92

98

—

%

—

Output impedance

ZO

—

300

—

Ω

—

Offset level

VOS

—

6.3

—

V

Note 8

Note

1) In accordance with the given electrooptical characteristics, the black level is defined as the average value

of D2, D3 to D12.

2) For the sensitivity test light is applied with a uniform intensity of illumination.

3) PRNU is defined as indicated below. Ray incidence conditions are the same as for Note 2.

VOUT-G = 500mV (Typ.)

PRNU =

(VMAX – VMIN) /2

VAVE

× 100 [%]

Where the 2700 pixels are divided into blocks of 100. The maximum output of each block is set to VMAX,

the minimum output to VMIN and the average output to VAVE.

4) Use below the minimum value of the saturation output voltage.

5) Saturation exposure is defined as follows.

SE = VSAT

R

Where R indicates RR, RG, RB, and SE indicates SER, SEG, SEB.

6) Optical signal accumulated time τ int stands at 5ms.

7) VOUT-G = 500mV (Typ.)

VOUT

8) Vos is defined as the right side.

VOUT indicates VOUT-R, VOUT-G, and VOUT-B.

VOS

GND

–3–

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