IRAMS10UP60A データシートの表示（PDF） - International Rectifier
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IRAMS10UP60A
International Rectifier
IRAMS10UP60A Datasheet PDF : 17 Pages
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IRAMS10UP60A
Inverter Section Electrical Characteristics @ TJ = 25°C
Symbol
Parameter
Min Typ Max Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown
Voltage
600
---
---
V VIN=0V, IC=20µA
∆V(BR)CES / ∆T
Temperature Coeff. Of
Breakdown Voltage
---
VCE(ON)
Collector-to-Emitter Saturation ---
Voltage
---
ICES
Zero Gate Voltage Collector
---
Current-to-Emitter
---
0.57
1.7
2.0
5
10
Ilk_module
Zero Gate Phase-to-Phase
Current
--
--
---
1.8
VFM
Diode Forward Voltage Drop
---
1.3
Inverter Section Switching Characteristics
---
2.0
2.4
15
40
50
2.35
1.7
V/°C
V
µA
VIN=0V, IC=1.0mA
(25°C - 150°C)
IC=5A TJ=25°C, VDD=15V
IC=5A TJ=150°C
VIN=5V, V+=600V
VIN=5V, V+=600V, TJ=150°C
µA VIN=5V, V+=600V
V IC=5A
IC=5A, TJ=150°C
Symbol
Eon
Eoff
Etot
Eon
Eoff
Etot
Erec
trr
RBSOA
Parameter
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-on Swtiching Loss
Turn-off Switching Loss
Total Switching Loss
Diode Reverse Recovery
energy
Diode Reverse Recovery time
Reverse Bias Safe Operating
Area
Min Typ Max Units Conditions
---
200 235
IC=5A, V+=400V
---
75
100
µJ VDD=15V, L=1mH
---
275 335
---
300 360
See CT1
TJ=25°C
TJ=150°C
---
135 165
µJ Energy losses include "tail" and
---
435 525
diode reverse recovery
---
30
40
---
100 145
FULL SQUARE
µJ TJ=150°C, V+ =400V VDD=15V,
ns IF=5A, L=1mH
TJ=150°C, IC=5A, VP=600V
V+=480V, VDD=+15V to 0V
See CT3
SCSOA
Short Circuit Safe Operating
Area
TJ=150°C, VP=600V,
10
---
---
µs V+=360V,
VDD=+15V to 0V
See CT2
Thermal Resistance
Symbol
Rth(J-C)
Rth(J-C)
Rth(C-S)
Parameter
Junction to case thermal
resistance, each IGBT under
inverter operation.
Junction to case thermal
resistance, each Diode under
inverter operation.
Thermal Resistance case to
sink
Min Typ Max Units Conditions
---
4.2
4.7 °C/W
Flat, greased surface.
Heatsink compound thermal
---
5.5
6.5 °C/W conductivity - 1W/mK
---
0.1
--- °C/W
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