IRF1010ZS データシートの表示（PDF） - International Rectifier

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IRF1010ZS

HEXFET® Power MOSFET

International Rectifier 

IRF1010ZS/L

100

LIMITED BY PACKAGE

80

60

40

20

0

25

50 75 100 125 150 175

TC , Case Temperature (°C)

Fig 9. Maximum Drain Current Vs.

Case Temperature

2.5

ID = 75A

VGS = 10V

2.0

1.5

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 10. Normalized On-Resistance

Vs. Temperature

10

1

D = 0.50

0.20

0.1

0.10

0.05

0.02

0.01

0.01

SINGLE PULSE

( THERMAL RESPONSE )

0.001

1E-006

1E-005

0.0001

0.001

t1 , Rectangular Pulse Duration (sec)

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.01

0.1

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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