IRF3717 データシートの表示（PDF） - International Rectifier

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IRF3717

HEXFET® Power MOSFET

International Rectifier 

IRF3717

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

∆VGS(th)/∆TJ

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

20

–––

–––

–––

1.55

–––

–––

0.014

3.7

4.8

2.0

-5.4

–––

–––

4.4

5.7

2.45

–––

V VGS = 0V, ID = 250µA

V/°C

mΩ

Reference to 25°C, ID = 1mA

e VGS = 10V, ID = 20A

e VGS = 4.5V, ID = 16A

V VDS = VGS, ID = 250µA

mV/°C

IDSS

Drain-to-Source Leakage Current

––– ––– 1.0 µA VDS = 16V, VGS = 0V

––– ––– 150

VDS = 16V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

––– ––– 100 nA VGS = 20V

Gate-to-Source Reverse Leakage

––– ––– -100

VGS = -20V

gfs

Forward Transconductance

Qg

Total Gate Charge

57 ––– –––

––– 22 33

S VDS = 10V, ID = 16A

Qgs1

Qgs2

Qgd

Qgodr

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

––– 6.8 –––

––– 2.2 –––

––– 7.3 –––

––– 5.7 –––

VDS = 10V

nC VGS = 4.5V

ID = 16A

See Fig. 16

Qsw

Switch Charge (Qgs2 + Qgd)

––– 9.5 –––

Qoss

td(on)

tr

td(off)

Output Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

––– 12 ––– nC VDS = 10V, VGS = 0V

––– 12 –––

VDD = 10V, VGS = 4.5V

––– 14 –––

ID = 16A

––– 15 ––– ns Clamped Inductive Load

tf

Fall Time

––– 6.0 –––

Ciss

Input Capacitance

––– 2890 –––

VGS = 0V

Coss

Output Capacitance

––– 930 ––– pF VDS = 10V

Crss

Reverse Transfer Capacitance

––– 430 –––

ƒ = 1.0MHz

Avalanche Characteristics

EAS

IAR

d Parameter

Single Pulse Avalanche Energy

™ Avalanche Current

Typ.

–––

–––

Max.

32

16

Units

mJ

A

Diode Characteristics

Parameter

IS

Continuous Source Current

Min. Typ. Max. Units

Conditions

––– ––– 20

MOSFET symbol

D

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

––– ––– 160

––– ––– 1.0

––– 22 32

––– 13 19

A showing the

integral reverse

G

e p-n junction diode.

S

V TJ = 25°C, IS = 16A, VGS = 0V

e ns TJ = 25°C, IF = 16A, VDD = 10V

nC di/dt = 100A/µs

2

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