IRF710A データシートの表示（PDF） - Fairchild Semiconductor
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IRF710A Datasheet PDF : 7 Pages
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IRF710A
1&+$11(/
32:(5 026)(7
Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol
BVDSS
∆BV/∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
400 -- -- V
-- 0.53 -- V/°C
2.0 -- 4.0 V
-- -- 100 nA
-- -- -100
-- -- 10
-- -- 100 µA
-- -- 3.6 Ω
-- 1.29 --
-- 215 280
-- 35 42 pF
-- 13 17
-- 11 30
-- 15 40
ns
-- 38 90
-- 13 35
-- 10 14
-- 1.8 -- nC
-- 5.4 --
VGS=0V,ID=250µA
ID=250µA See Fig 7
VDS=5V,ID=250µA
VGS=30V
VGS=-30V
VDS=400V
VDS=320V,TC=125°C
VGS=10V,ID=1A
(4)
VDS=50V,ID=1A
(4)
VGS=0V,VDS=25V,f =1MHz
See Fig 5
VDD=200V,ID=2A,
RG=24Ω
See Fig 13
(4) (5)
VDS=320V,VGS=10V,
ID=2A
See Fig 6 & Fig 12 (4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
-- -- 2
Integral reverse pn-diode
A
(1) -- -- 6
in the MOSFET
(4) -- -- 1.5 V TJ=25°C,IS=2A,VGS=0V
-- 224 -- ns TJ=25°C,IF=2A
-- 0.87 -- µC diF/dt=100A/µs
(4)
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=50mH, IAS=2A, VDD=50V, RG=27Ω, Starting TJ =25°C
(3) ISD ≤ 2A, di/dt ≤ 80A/µs, VDD ≤ BVDSS , Starting TJ =25°C
(4) Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2%
(5) Essentially Independent of Operating Temperature
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