IRF6608 データシートの表示（PDF） - International Rectifier
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IRF6608 Datasheet PDF : 9 Pages
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IRF6608
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/∆TJ
RDS(on)
VGS(th)
∆VGS(th)/∆TJ
Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
Breakdown Voltage Temp. Coefficient ––– 29 ––– mV/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance ––– 7.0 9.0 mΩ VGS = 10V, ID = 13A e
––– 8.0 11
VGS = 4.5V, ID = 10A e
Gate Threshold Voltage
1.0 ––– 3.0 V VDS = VGS, ID = 250µA
Gate Threshold Voltage Coefficient ––– -5.4 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 30 µA VDS = 24V, VGS = 0V
––– ––– 100
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 12V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -12V
gfs
Forward Transconductance
28 ––– ––– S VDS = 15V, ID = 8.8A
Qg
Total Gate Charge
––– 16 24
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 4.6 –––
VDS = 15V
––– 1.4 ––– nC VGS = 4.5V
––– 5.3 –––
ID = 8.8A
––– 4.7 –––
See Fig. 16
Qsw
Switch Charge (Qgs2 + Qgd)
––– 6.7 –––
Qoss
td(on)
tr
td(off)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
––– 11 ––– nC VDS = 15V, VGS = 0V
––– 13 –––
VDD = 15V, VGS = 4.5V e
––– 12 –––
ID = 8.8A
––– 16 ––– ns Clamped Inductive Load
tf
Fall Time
––– 3.4 –––
Ciss
Input Capacitance
––– 2120 –––
VGS = 0V
Coss
Output Capacitance
––– 440 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 260 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energyd
IAR
Avalanche Current c
EAR
Repetitive Avalanche Energy c
Typ.
–––
–––
–––
Max.
54
8.8
0.21
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
Min. Typ. Max. Units
Conditions
––– ––– 13
MOSFET symbol
D
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) c
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 1.38mH
RG = 25Ω, IAS = 8.8A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in. square Cu board.
2
––– ––– 100
––– 0.94 1.2
––– 31 47
––– 33 50
A showing the
G
integral reverse
S
p-n junction diode.
V TJ = 25°C, IS = 8.8A, VGS = 0V e
ns TJ = 25°C, IF = 8.8A
nC di/dt = 100A/µs e
Used double sided cooling, mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
TC measured with thermal couple mounted to top (Drain) of part.
Rθ is measured at TJ of approximately 90°C.
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