IRF7103PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
50 V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
0.049
0.11 0.13
0.16 0.20
V/°C
Ω
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 3.0A
VGS = 4.5V, ID = 1.5A
VGS(th)
Gate Threshold Voltage
1.0 3.0 V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
3.8 S VDS = 15V, ID = 3.0A
2.0 µA VDS = 40V, VGS = 0V
25
VDS = 40V, VGS = 0V, TJ = 55 °C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
100 nA VGS = 20V
-100
VGS = - 20V
Qg
Total Gate Charge
12 30
ID = 2.0A
Qgs
Gate-to-Source Charge
1.2 nC VDS = 25V
Qgd
Gate-to-Drain ("Miller") Charge
3.5
VGS = 10V
td(on)
tr
td(off)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
9.0 20
8.0 20
45 70
VDD = 25V
ns ID = 1.0A
RG = 6.0Ω
tf
Fall Time
25 50
RD = 25Ω
LD
Internal Drain Inductance
LS
Internal Source Inductance
D
4.0
nH Between lead,6mm(0.25in.)
from package and center G
6.0
of die contact
S
Ciss
Input Capacitance
Coss
Output Capacitance
290
VGS = 0V
140 pF VDS = 25V
Crss
Reverse Transfer Capacitance
37
= 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
2.0
showing the
A integral reverse
G
12
p-n junction diode.
S
1.2
70 100
110 170
V TJ = 25°C, IS = 1.5A, VGS = 0V
ns TJ = 25°C, IF = 1.5A
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
ISD ≤ 1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.