IRF7807Z(2003) データシートの表示（PDF） - International Rectifier
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IRF7807Z Datasheet PDF : 10 Pages
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PD - 94707
IRF7807Z
Applications
l Control FET for Notebook Processor Power
l Synchronous Rectifier MOSFET for
Graphics Cards and POL Converters in
Networking and Telecommunication
Systems
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
Qg(typ.)
13.8m:@VGS = 10V 7.2nC
S
1
S
2
S
3
G
4
AA
8
D
7
D
6
D
5
D
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS
Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
c Pulsed Drain Current
f Power Dissipation
f Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
RθJL
RθJA
Junction-to-Drain Lead
f Junction-to-Ambient
Notes through are on page 10
www.irf.com
Max.
30
± 20
11
8.7
88
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
6/23/03
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