IRF7341PBF データシートの表示（PDF） - International Rectifier

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IRF7341PBF

HEXFET Power MOSFET

International Rectifier 

IRF7341PbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

55 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.059 ––– V/°C Reference to 25°C, ID = 1mA

RDS(on)

Static Drain-to-Source On-Resistance

––– 0.043 0.050

––– 0.056 0.065

Ω

VGS = 10V, ID = 4.7A „

VGS = 4.5V, ID = 3.8A „

VGS(th)

Gate Threshold Voltage

1.0 ––– ––– V VDS = VGS, ID = 250µA

gfs

Forward Transconductance

7.9 ––– ––– S VDS = 10V, ID = 4.5A

IDSS

Drain-to-Source Leakage Current

––– ––– 2.0

––– ––– 25

µA

VDS = 55V, VGS = 0V

VDS = 55V, VGS = 0V, TJ = 55°C

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

––– ––– -100 nA VGS = -20V

––– ––– 100

VGS = 20V

Qg

Total Gate Charge

––– 24 36

ID = 4.5A

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain ("Miller") Charge

––– 2.3 3.4

––– 7.0 10

nC VDS = 44V

VGS = 10V, See Fig. 10 „

td(on)

Turn-On Delay Time

––– 8.3 12

VDD = 28V

tr

td(off)

tf

Rise Time

Turn-Off Delay Time

Fall Time

––– 3.2 4.8

––– 32 48

––– 13 20

ns ID = 1.0A

RG = 6.0Ω

RD = 16Ω, „

Ciss

Input Capacitance

––– 740 –––

VGS = 0V

Coss

Output Capacitance

––– 190 ––– pF VDS = 25V

Crss

Reverse Transfer Capacitance

––– 71 –––

ƒ = 1.0MHz, See Fig. 9

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

Min. Typ. Max. Units

Conditions

––– ––– 2.0

––– ––– 38

MOSFET symbol

showing the

A integral reverse

p-n junction diode.

D

G

S

––– ––– 1.2 V TJ = 25°C, IS = 2.0A, VGS = 0V ƒ

––– 60 90 ns TJ = 25°C, IF = 2.0A

––– 120 170 nC di/dt = -100A/µs ƒ

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ Starting TJ = 25°C, L = 6.5mH

RG = 25Ω, IAS = 4.7A. (See Figure 8)

2

ƒ ISD ≤ 4.7A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

… When mounted on 1 inch square copper board, t<10 sec

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