IRF8010L データシートの表示（PDF） - International Rectifier
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IRF8010L Datasheet PDF : 10 Pages
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PD - 94573
SMPS MOSFET
Applications
l High frequency DC-DC converters
IRF8010S
IRF8010L
HEXFET® Power MOSFET
l UPS and Motor Control
VDSS RDS(on) max
ID
Benefits
l Low Gate-to-Drain Charge to Reduce
100V
15mΩ
80A
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
l Typical RDS(on) = 12mΩ
D2Pak
IRF8010S
TO-262
IRF8010L
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
c ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
e Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJC
Junction-to-Case
g Junction-to-Case (end of life)
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
j Junction-to-Ambient (PCB Mount, steady state)
Max.
80i
57
320
260
1.8
± 20
16
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
0.50
–––
Max.
0.57
0.80
–––
40
Notes through are on page 8
www.irf.com
Units
A
W
W/°C
V
V/ns
°C
Units
°C/W
1
01/28/03
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