IRF9953TRPBF データシートの表示（PDF） - International Rectifier
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IRF9953TRPBF Datasheet PDF : 7 Pages
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IRF9953PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
-30 V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.015 V/°C Reference to 25°C, ID = -1mA
RDS(on)
Static Drain-to-Source On-Resistance
0.165 0.250
0.290 0.400
Ω
VGS = 10V, ID = -1.0A
VGS = 4.5V, ID = -0.50A
VGS(th)
Gate Threshold Voltage
-1.0 V VDS = VGS, ID = -250µA
gfs
Forward Transconductance
-2.4 S VDS = -15V, ID = -2.3A
IDSS
Drain-to-Source Leakage Current
-2.0
-25
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 55°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
100 nA VGS = -20V
-100
VGS = 20V
Qg
Total Gate Charge
6.1 12
ID = -2.3A
Qgs
Gate-to-Source Charge
1.7 3.4 nC VDS = -10V
Qgd
Gate-to-Drain ("Miller") Charge
1.1 2.2
VGS = -10V, See Fig. 10
td(on)
Turn-On Delay Time
9.7 19
VDD = -10V
tr
td(off)
Rise Time
Turn-Off Delay Time
14 28
20 40
ns ID = -1.0A
RG = 6.0Ω
tf
Fall Time
6.9 14
RD = 10Ω
Ciss
Input Capacitance
190
VGS = 0V
Coss
Output Capacitance
120 pF VDS = -15V
Crss
Reverse Transfer Capacitance
61
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min.
Typ.
0.82
27
31
Max.
1.3
16
1.2
54
62
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.25A, VGS = 0V
TJ = 25°C, IF = -1.25A
di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 67mH
RG = 25Ω, IAS = -1.3A.
Surface mounted on FR-4 board, t ≤ 10sec.
ISD ≤ -1.3A, di/dt ≤ -92A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
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