IRF830AS(2011) データシートの表示（PDF） - Vishay Semiconductors

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IRF830AS
(Rev.:2011)

Power MOSFET

Vishay Semiconductors 

IRF830AS, IRF830AL, SiHF830AS, SiHF830AL

Vishay Siliconix

104

VGS = 0 V, f = 1 MHz

Ciss = Cgs + Cgd, Cds Shorted

Crss = Cgd

103

Coss = Cds + Cgd

Ciss

102

Coss

10

Crss

1

1

91062_05

10

102

103

VDS, Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

102

10

TJ = 150 °C

1

TJ = 25 °C

0.1

VGS = 0 V

0.2

0.4

0.6

0.8

1.0

1.2

91062_07

VSD, Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

20 ID = 5.0 A

16

VDS = 400 V

VDS = 250 V

12

VDS = 100 V

8

4

0

0

91062_06

For test circuit

see figure 13

4

8

12

16

20

24

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

102

Operation in this area limited

by RDS(on)

10 µs

10

100 µs

1

1 ms

TC = 25 °C

TJ = 150 °C

0.1 Single Pulse

10 ms

10

102

103

104

91062_08

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

www.vishay.com

4

Document Number: 91062

S11-1049-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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