IRF830AS(2011) データシートの表示（PDF） - Vishay Semiconductors

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IRF830AS
(Rev.:2011)

Power MOSFET

Vishay Semiconductors 

IRF830AS, IRF830AL, SiHF830AS, SiHF830AL

Vishay Siliconix

500

ID

Top 2.2 A

400

3.2 A

Bottom 5.0 A

300

200

100

0

25

50

75

100

125

150

91062_12c

Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

VGS

QGS

VG

QG

QGD

Charge

Fig. 13a - Maximum Avalanche Energy vs. Drain Current

790

785

780

775

770

0.0

1.0

2.0

3.0

4.0

5.0

91062_12d

IAV, Avalanche Current (A)

Fig. 12d - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

+

D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

www.vishay.com

6

Document Number: 91062

S11-1049-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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