IRF830ASTRL データシートの表示（PDF） - Vishay Semiconductors
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IRF830ASTRL Datasheet PDF : 8 Pages
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IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
MAX.
40
1.7
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mAd
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3.0 Ab
VDS = 50 V, ID = 3.0 Ad
500
-
-
V
-
0.60
-
V/°C
2.0
-
4.5
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
1.4
Ω
2.8
-
-
S
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Coss eff.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
-
VGS = 0 V,
VDS = 25 V,
-
f = 1.0 MHz, see fig. 5d
-
VDS = 1.0 V, f = 1.0 MHz
-
VGS = 0 V VDS = 400 V, f = 1.0 MHz
-
VDS = 0 V to 400 Vc, d
-
-
VGS = 10 V
ID = 5.0 A, VDS = 400 V,
see fig. 6 and 13b, d
-
-
-
VDD = 250 V, ID = 5.0 A,
-
RG = 14 Ω, RD = 49 Ω, see fig. 10b, d
-
-
620
-
93
-
pF
4.3
-
886
-
27
-
39
-
-
24
-
6.3
nC
-
11
10
-
21
-
ns
21
-
15
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
5.0
A
-
-
20
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 5.0 A, VGS = 0 Vb
-
-
1.5
V
trr
-
TJ = 25 °C, IF = 5.0 A, dI/dt = 100 A/µsb, d
430
650
ns
Qrr
-
2.0
3.0
µC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
d. Uses SiHF830A data and test conditions.
www.vishay.com
2
Document Number: 91062
S-81352-Rev. A, 16-Jun-08
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