LH28F400SUB-Z0 データシートの表示（PDF） - Sharp Electronics

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LH28F400SUB-Z0

4M (512K × 8, 256K × 16) Flash Memory

Sharp Electronics 

LH28F400SUB-Z0

4M (512K × 8, 256K × 16)

Flash Memory

FEATURES

• User-Configurable x8 or x16 Operation

• 5 V Write/Erase Operation

(5 V VPP, 3.3 V VCC)

– No Requirement for DC/DC Converter to

Write/Erase

• 150 ns Maximum Access Time

(VCC = 3.3 V ± 0.3 V)

• Min. 2.7 V Read Capability

– 160 ns Maximum Access Time

(VCC = 2.7 V)

• 32 Independently Lockable Blocks (16K)

• 100,000 Erase Cycles per Block

• Automated Byte Write/Block Erase

– Command User Interface

– Status Register

– RY /» BY» Status Output

• System Performance Enhancement

– Erase Suspend for Read

– Two-Byte Write

– Full Chip Erase

• Data Protection

– Hardware Erase/Write Lockout during

Power Transition

– Software Erase/Write Lockout

• Independently Lockable for Write/Erase

on Each Block (Lock Block and Protect

Set/Reset)

• 4 µA (Typ.) ICC in CMOS Standby

• 0.2 µA (Typ.) Deep Power-Down

• State-of-the-Art 0.45 µm ETOX™ Flash

Technology

• Extended Temperature Operation

– -20°C to +85°C

• 49-Pin, .67 mm × 8 mm × 8 mm

CSP Package

49-PIN CSP

TOP VIEW

1

2

3

4

5

6

7

A A1

A4

A7 VPP A9

A12 A15

B A2 A5 A17 RP A8 A11 A14

C A3 A6 RY/BY NC WE A10 A13

D A0 DQ9 NC NC NC DQ13 A16

E OE DQ1 DQ3 DQ11 DQ4 DQ6 DAQ-115/

F GND DQ8 DQ10 VCC DQ12 DQ14 GND

G CE DQ0 DQ2 VCC DQ5 DQ7 BYTE

28F400SUB-1

Figure 1. CSP Configuration

1

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