IRFU120ZPBF(2010) データシートの表示（PDF） - International Rectifier
部品番号
コンポーネント説明
メーカー
IRFU120ZPBF Datasheet PDF : 11 Pages
| |||
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in a wide variety of applications.
PD - 95772B
IRFR120ZPbF
IRFU120ZPbF
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 190mΩ
ID = 8.7A
S
D-Pak
I-Pak
IRFR120ZPbF IRFU120ZPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
d EAS (Thermally limited) Single Pulse Avalanche Energy
h EAS (Tested ) Single Pulse Avalanche Energy Tested Value
à IAR
Avalanche Current
g EAR
Repetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθJA
i Junction-to-Case
Junction-to-Ambient (PCB mount)
RθJA
Junction-to-Ambient
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
Max.
8.7
6.1
35
35
0.23
± 20
18
20
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Typ.
–––
–––
–––
Max.
4.28
40
110
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
09/16/10
Share Link: 