HM62W16255H データシートの表示（PDF） - Hitachi -> Renesas Electronics

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HM62W16255H

4M high speed SRAM (256-kword x 16-bit), 12ns access time

Hitachi -> Renesas Electronics 

HM62W16255H Series

4M High Speed SRAM (256-kword × 16-bit)

ADE-203-751D (Z)

Rev. 1.0

Sep. 15, 1998

Description

The HM62W16255H is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high

speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed

circuit designing technology. It is most appropriate for the application which requires high speed, high

density memory and wide bit width configuration, such as cache and buffer memory in system. The

HM62W16255H is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density

surface mounting.

Features

• Single 3.3 V supply: 3.3 V ± 0.3V

• Access time: 12/15 ns (max)

• Completely static memory

 No clock or timing strobe required

• Equal access and cycle times

• Directly TTL compatible

 All inputs and outputs

• Operating current: 180/160 mA (max)

• TTL standby current: 60/50 mA (max)

• CMOS standby current: 5 mA (max)

: 1mA (max) (L-version)

• Data retension current: 0.6 mA (max) (L-version)

• Data retension voltage: 2.0 V (min) (L-version)

• Center VCC and VSS type pinout

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