HM62W16255HLTT-12 データシートの表示（PDF） - Hitachi -> Renesas Electronics

部品番号

コンポーネント説明

メーカー

HM62W16255HLTT-12

4M high speed SRAM (256-kword x 16-bit), 12ns access time

Hitachi -> Renesas Electronics 

HM62W16255H Series

Recommended DC Operating Conditions (Ta = 0 to +70°C)

Parameter

Symbol

Min

Typ

Supply voltage

VCC*3

VSS * 4

3.0

3.3

0

0

Input voltage

VIH

2.2

—

VIL

–0.5*1

—

Notes: 1. VIL (min) = –2.0 V for pulse width (under shoot) ≤ 8 ns

2. VIH (max) = VCC + 2.0 V for pulse width (over shoot) ≤ 8 ns

3. The supply voltage with all VCC pins must be on the same level.

4. The supply voltage with all VSS pins must be on the same level.

Max

3.6

0

VCC + 0.5*2

0.8

Unit

V

V

V

V

DC Characteristics (Ta = 0 to +70°C, VCC = 3.3 V ± 0.3 V, VSS = 0 V)

Parameter

Symbol Min

Typ*1 Max Unit Test conditions

Input leakage current

Output leakage

current*1

|ILI|

—

—

2

|ILO|

—

—

2

µA Vin = VSS to VCC

µA Vin = VSS to VCC

Operating power

supply current

12 ns cycle ICC

Standby power supply

current

15 ns cycle ICC

12 ns cycle ISB

15 ns cycle ISB

I SB1

—

—

180

mA Min cycle

CS = VIL, Iout = 0 mA

Other inputs = VIH/VIL

—

—

160

—

—

60

mA Min cycle, CS = VIH,

Other inputs = VIH/VIL

—

—

50

—

0.05 5

mA f = 0 MHz

VCC ≥ CS ≥ VCC – 0.2 V,

(1) 0 V ≤ Vin ≤ 0.2 V or

(2) VCC ≥ Vin ≥ VCC – 0.2 V

—*2

0.05*2 1.0*2

Output voltage

VOL

—

—

0.4

V

VOH

2.4

—

—

V

Note: 1. Typical values are at VCC = 3.3 V, Ta = +25°C and not guaranteed.

2. This characteristics is guaranteed only for L-version.

IOL = 8 mA

IOH = –4 mA

5

Share Link: