IRFU120ZPBF データシートの表示（PDF） - Kersemi Electronic Co., Ltd.

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IRFU120ZPBF

HEXFET® Power MOSFET

Kersemi Electronic Co., Ltd. 

IRFR/U120ZPbF

100

VGS

TOP

15V

10V

8.0V

10

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

1

0.1

0.01

00.1

4.5V

60µs PULSE WIDTH

Tj = 25°C

1

10

11000

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

10

5.5V

5.0V

BOTTOM 4.5V

1

4.5V

0.1

00.1

60µs PULSE WIDTH

Tj = 175°C

1

10

11000

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100.0

10.0

TJ = 175°C

1.0

TJ = 25°C

0.1

4.0

VDS = 25V

60µs PULSE WIDTH

5.0

6.0

7.0

8.0

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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12

10

TJ = 175°C

8

6

TJ = 25°C

4

2

VDS = 10V

380µs PULSE WIDTH

0

0

2

4

6

8

ID, Drain-to-Source Current (A)

Fig 4. Typical Forward Transconductance

Vs. Drain Current

3

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